RQ5E030AJTCL

Teknik Özellikler

Vgsth Max Id

1.5V @ 1mA

Power Dissipation Max

1W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

75m Ω @ 3A, 4.5V

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

20 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±12V

Ds Breakdown Voltagemin

30V

Fet Type

N-Channel

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

3A Ta

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Kılıf / Paket

SC-96

Drain Currentmax Abs Id

3A

Ambalaj

Cut Tape (CT)

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

2.1nC @ 4.5V

Drainsource On Resistancemax

0.075Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V

Terminal Sayısı

3

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Jesd30 Code

R-PDSO-G3

Yüzey Montaj

YES

Number Of Elements

1

Input Capacitance Ciss Max Vds

240pF @ 15V