RQ3G100GNTB

Teknik Özellikler

Continuous Drain Current Id

10A

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

5

Yayın Yılı

2014

Drain To Source Voltage Vdss

40V

Case Connection

DRAIN

Jesd30 Code

R-PDSO-F5

Number Of Elements

1

Input Capacitance Ciss Max Vds

615pF @ 20V

Terminal Formu

FLAT

Current Continuous Drain Id25

10A Ta

Transistor Element Material

SILICON

Direnç

11mOhm

Kılıf / Paket

8-PowerVDFN

Ambalaj

Cut Tape (CT)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

8.4nC @ 10V

ECCN Kodu

EAR99

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

20 Weeks

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

15.6 mJ

Ds Breakdown Voltagemin

40V

Vgs Max

±20V

Reach Svhc

No SVHC

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Threshold Voltage

2.5V

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

150°C TJ

Pulsed Drain Currentmax Idm

40A

Power Dissipation Max

2W Ta

Rds On Max Id Vgs

14.3m Ω @ 10A, 10V

Terminal Pozisyonu

DUAL