RQ3E080BNTB

Teknik Özellikler

Pulsed Drain Currentmax Idm

32A

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

2W Ta

Kurşunsuz

Lead Free

Vgsth Max Id

2.5V @ 1mA

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

15.2m Ω @ 8A, 10V

Terminal Pozisyonu

DUAL

Ds Breakdown Voltagemin

30V

Vgs Max

±20V

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

20 Weeks

Montaj Tipi

Surface Mount

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Drain Currentmax Abs Id

8A

Kılıf / Paket

8-PowerVDFN

Transistor Element Material

SILICON

Current Continuous Drain Id25

8A Ta

Terminal Formu

FLAT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.022Ohm

Gate Charge Qg Max Vgs

14.5nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

ECCN Kodu

EAR99

Ambalaj

Cut Tape (CT)

Drain To Source Voltage Vdss

30V

Case Connection

DRAIN

Continuous Drain Current Id

8A

Transistor Application

SWITCHING

Yayın Yılı

2014

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

5

Input Capacitance Ciss Max Vds

660pF @ 15V

Number Of Elements

1