RF4E110BNTR

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

43 ns

Vgsth Max Id

2V @ 250μA

Fet Type

N-Channel

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Fall Time Typ

11 ns

Çalışma Sıcaklığı

150°C TJ

Ds Breakdown Voltagemin

30V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Rise Time

12ns

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

6

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

24nC @ 10V

Kılıf / Paket

8-PowerUDFN

Power Dissipation Max

2W Ta

Number Of Elements

1

Element Configuration

Single

Vgs Max

±20V

Turn On Delay Time

14 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-N6

Case Connection

DRAIN

Current Continuous Drain Id25

11A Ta

Fabrika Tedarik Süresi

20 Weeks

Input Capacitance Ciss Max Vds

1200pF @ 15V

Pulsed Drain Currentmax Idm

44A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED