RF4E080BNTR

Teknik Özellikler

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.0246Ohm

Fall Time Typ

7 ns

Drain Currentmax Abs Id

8A

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

33 ns

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

2V @ 250μA

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

32A

Tepe Reflow Süresi (maks. sn)

10

Input Capacitance Ciss Max Vds

660pF @ 15V

Continuous Drain Current Id

8A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

17.6m Ω @ 8A, 10V

Yayın Yılı

2013

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-N6

Current Continuous Drain Id25

8A Ta

Case Connection

DRAIN

Fabrika Tedarik Süresi

20 Weeks

Kılıf / Paket

8-PowerUDFN

Power Dissipation Max

2W Ta

Number Of Elements

1

Element Configuration

Single

Vgs Max

±20V

Turn On Delay Time

8 ns

Drain To Source Breakdown Voltage

30V

Terminal Sayısı

6

Parça Durumu

Active

Kurşunsuz

Lead Free