RF4E075ATTCR

Teknik Özellikler

Fet Type

P-Channel

Vgsth Max Id

2.5V @ 1mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Ambalaj

Cut Tape (CT)

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Avalanche Energy Rating Eas

10.6 mJ

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.0317Ohm

Çalışma Sıcaklığı

150°C TJ

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

22nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Terminal Sayısı

6

Power Dissipation Max

2W Ta

Number Of Elements

1

Vgs Max

±20V

Kılıf / Paket

8-PowerUDFN

Fabrika Tedarik Süresi

10 Weeks

Current Continuous Drain Id25

7.5A Ta

Case Connection

DRAIN

Jesd30 Code

S-PDSO-N6

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2015

Rds On Max Id Vgs

21.7m Ω @ 7.5A, 10V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

7.5A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

30A

Input Capacitance Ciss Max Vds

1000pF @ 15V