RE1C001UNTCL

Teknik Özellikler

Çalışma Sıcaklığı

150°C TJ

Ds Breakdown Voltagemin

20V

Power Dissipation Max

150mW Ta

Number Of Channels

1

Continuous Drain Current Id

100mA

Fall Time Typ

38 ns

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Montaj Tipi

Surface Mount

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Current Continuous Drain Id25

100mA Ta

Jesd30 Code

R-PDSO-F3

Input Capacitance Ciss Max Vds

7.1pF @ 10V

Turn Off Delay Time

20 ns

Turn On Delay Time

5 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

20V

Vgs Max

±8V

Transistor Application

SWITCHING

Rise Time

4ns

Terminal Pozisyonu

DUAL

Yayın Yılı

2012

Terminal Sayısı

3

Terminal Formu

FLAT

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Rds On Max Id Vgs

3.5 Ω @ 100mA, 4.5V

Montaj

Surface Mount

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

16 Weeks

Kurşunsuz

Lead Free

Vgsth Max Id

1V @ 100μA

Kılıf / Paket

SC-89, SOT-490

Fet Type

N-Channel

Gate To Source Voltage Vgs

8V

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED