R6011ENX

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Case Connection

ISOLATED

Avalanche Energy Rating Eas

210 mJ

Continuous Drain Current Id

11A

Montaj

Through Hole

Ambalaj

Bulk

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reach Svhc

No SVHC

Threshold Voltage

4V

Rds On Max Id Vgs

390m Ω @ 3.8A, 10V

Jedec95 Code

TO-220AB

Parça Durumu

Active

Power Dissipation Max

40W Tc

Number Of Elements

1

Current Continuous Drain Id25

11A Tc

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

32nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

600V

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

3

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

670pF @ 25V

Terminal Pozisyonu

SINGLE

Vgsth Max Id

4V @ 1mA

Pulsed Drain Currentmax Idm

22A

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack