R6004ENDTL

Teknik Özellikler

Pulsed Drain Currentmax Idm

8A

Vgsth Max Id

4V @ 1mA

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Terminal Sayısı

2

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

250pF @ 25V

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz

Lead Free

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

600V

Power Dissipation Max

20W Tc

Parça Durumu

Not For New Designs

Fabrika Tedarik Süresi

12 Weeks

Jesd30 Code

R-PSSO-G2

Gate Charge Qg Max Vgs

15nC @ 10V

Current Continuous Drain Id25

4A Tc

Number Of Elements

1

Rds On Max Id Vgs

980m Ω @ 1.5A, 10V

Threshold Voltage

4V

Yayın Yılı

2014

Drain Currentmax Abs Id

4A

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Cut Tape (CT)

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.98Ohm

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

46 mJ

Case Connection

DRAIN

Montaj

Surface Mount

Continuous Drain Current Id

4A