2SK2225-80-E#T2

Teknik Özellikler

Transistor Type

1 N-Channel

Üretici Parça No

2SK2225-80-E#T2

Continuous Drain Current Id

2

Power Dissipation

50

Package Shape

RECTANGULAR

Number Of Channels

1 Channel

Genişlik

15.5 mm

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

7 A

Package Body Material

PLASTIC/EPOXY

Case Connection

ISOLATED

Power Dissipation Max

50W (Tc)

Yüzey Montaj

NO

Uzunluk

26.5 mm

Risk Rank

5.74

Drain Currentmax Id

2 A

RoHS

Details

Ambalaj

Tube

Fabrika Paket Adedi

25

Terminal Formu

THROUGH-HOLE

Typical Turnoff Delay Time

150 ns

Drainsource On Resistancemax

12 Ω

Maks. Çalışma Sıcaklığı

+ 150 C

Yükseklik

5.5 mm

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Samacsys Description

General Purpose Power MOSFETs Nch Single Power MOSFET 1500V 2A 12000mohm TO-3PF

Vds Drainsource Breakdown Voltage

1.5 kV

Montaj Tipi

Through Hole

Kılıf / Paket

TO-220-3 Full Pack

Forward Transconductance Min

0.45 S

Rise Time

50 ns

Part Life Cycle Code

Active

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

15V

Vgs Max

±20V

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

990 pF @ 10 V

Current Continuous Drain Id25

2A (Ta)

Rds On Max Id Vgs

12Ohm @ 1A, 15V

Part Package Code

TO-3PF