2SK1317-E

Teknik Özellikler

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

4 V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation

100W

Continuous Drain Current Id

2.5A

Fabrika Tedarik Süresi

16 Weeks

Rds On Max Id Vgs

12 Ω @ 2A, 15V

Current Continuous Drain Id25

2.5A Ta

Pin Sayısı

3

Manufacturer Package Identifier

PRSS0004ZE-A

Drain To Source Voltage Vdss

1500V

Parça Durumu

Active

Threshold Voltage

4V

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Reach Svhc

No SVHC

Case Connection

DRAIN

Power Dissipation Max

100W Tc

Montaj

Through Hole

Pulsed Drain Currentmax Idm

7A

Fet Type

N-Channel

Turn On Delay Time

17 ns

Kurşunsuz

Lead Free

Yayın Yılı

1999

Pin Sayısı

4

Turn Off Delay Time

110 ns

Kurşunsuz Kodu

yes

Ambalaj

Tube

Input Capacitance Ciss Max Vds

990pF @ 10V

Çalışma Sıcaklığı

150°C TJ

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

15V

Transistor Application

SWITCHING

Rise Time

70ns

Fall Time Typ

60 ns