Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgs Gatesource Breakdown Voltage
- - 2.7 V
- Montaj Stili
- SMD/SMT
- Configuration
- Single
- Birim Ağırlık
- 0.237911 oz
- Seri
- TGF3015
- Vds Drainsource Breakdown Voltage
- 32 V
- Moisture Sensitive
- Yes
- Kılıf / Paket
- QFN-EP-16
- Operating Frequency
- 0.03 GHz to 3 GHz
- Gain
- 17.1 dB
- Transistor Type
- HEMT
- Id Continuous Drain Current
- 557 mA
- Pd Power Dissipation
- 15.3 W
- Output Power
- 11 W
- Fabrika Paket Adedi
- 100
- RoHS
- Details
- Ambalaj
- Tray
- Development Kit
- TGF3015-SM-EVB1
- Transistor Polarity
- N-Channel
- Part Aliases
- TGF3015 1120419
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