2N2609

Teknik Özellikler

Current Drain Id Max

10mA

Ambalaj

Bag

Number Of Elements

1

Transistor Polarity

P-Channel

Fet Type

P-Channel

Voltage Breakdown Vbrgss

30V

REACH Uyumluluk Kodu

unknown

Maks. Çalışma Sıcaklığı

200°C

Maks. Çalışma Sıcaklığı

+ 200 C

Package Description

TO-18, 3 PIN

Package Body Material

METAL

Power Max

300mW

Package Style

CYLINDRICAL

Üretici Parça No

97-3057-10

Fabrika Paket Adedi

1

Operating Temperaturemax

200 °C

Kılıf / Paket

TO-206AA, TO-18-3 Metal Can

Terminal Pozisyonu

BOTTOM

Configuration

Single

Case Connection

GATE

HTS Kodu

8541.21.00.95

Vgs Gatesource Breakdown Voltage

30 V

Pd Power Dissipation

300 mW

Yayın Yılı

2002

Part Package Code

BCY

Gate To Source Voltage Vgs

30V

Montaj

Through Hole

Fet Technology

JUNCTION

Ihs Manufacturer

MICROSEMI CORP

Fabrika Tedarik Süresi

32 Weeks

Current Drain Idss Vds Vgs0

2mA @ 5V

Pin Sayısı

3

Number Of Terminals

3

Transistor Element Material

SILICON

Operating Mode

DEPLETION MODE

Voltage Cutoff Vgs Off Id

750mV @ 1A

Input Capacitance Ciss Max Vds

10pF @ 5V

JESD-609 Kodu

e0

Terminal Formu

WIRE

Tedarikçi Cihaz Paketi

TO-18 (TO-206AA)