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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Output Power
- 132 W
- Maks. Çalışma Sıcaklığı
- + 85 C
- Fabrika Paket Adedi
- 25
- RoHS
- Details
- Development Kit
- TGF2929-HM EVB1
- Ambalaj
- Waffle
- Transistor Polarity
- N-Channel
- Part Aliases
- TGF2929 1135635
- Seri
- TGF2929
- Configuration
- Single
- Montaj Stili
- SMD/SMT
- Vgs Gatesource Breakdown Voltage
- - 2.8 V
- Vds Drainsource Breakdown Voltage
- 50 V
- Moisture Sensitive
- Yes
- Kılıf / Paket
- NI-360
- Operating Frequency
- DC to 3.5 GHz
- Minimum Operating Temperature
- - 40 C
- Gain
- 17.4 dB
- Id Continuous Drain Current
- 7.2 A
- Transistor Type
- HEMT
- Operating Temperature Range
- - 40 C to + 85 C
- Pd Power Dissipation
- 140 W
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