Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Development Kit
- T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
- Gain
- 15 dB
- Moisture Sensitive
- Yes
- Montaj Stili
- SMD/SMT
- Pd Power Dissipation
- 12.5 W
- Birim Ağırlık
- 0.260886 oz
- RoHS
- Details
- Applications
- Military Radar, Professional and Military Radio Communications
- Id Continuous Drain Current
- 650 mA
- Kılıf / Paket
- NI-200
- Fabrika Paket Adedi
- 100
- Configuration
- Single
- Transistor Type
- HEMT
- Part Aliases
- T2G6000528 1099997
- Seri
- T2G6000528
- Output Power
- 10 W
- Transistor Polarity
- N-Channel
- Ambalaj
- Tray
- Operating Frequency
- DC to 6 GHz
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