T1G4012036-FS

Teknik Özellikler

Montaj Stili

SMD/SMT

RoHS

Details

Ambalaj

Tray

Maximum Drain Gate Voltage

- 2.9 V

Part Aliases

1096026 1096026

Seri

T1G4012036

Shipping Restrictions

This product may require additional documentation to export from the United States.

Vds Drainsource Breakdown Voltage

36 V

Gain

18.4 dB

Transistor Type

HEMT

Id Continuous Drain Current

12 A

Fabrika Paket Adedi

25

Pd Power Dissipation

117 W

Tip

GaN SiC HEMT

Operating Frequency

3.3 GHz

Transistor Polarity

N-Channel

Moisture Sensitive

Yes