T1G2028536-FS

Teknik Özellikler

Id Continuous Drain Current

24 A

Gain

18 dB

Transistor Type

HEMT

Moisture Sensitive

Yes

Transistor Polarity

N-Channel

Pd Power Dissipation

288 W

Fabrika Paket Adedi

25

Operating Frequency

2 GHz

Tip

GaN SiC HEMT

Kılıf / Paket

NI-780

Maks. Çalışma Sıcaklığı

+ 250 C

Montaj Stili

SMD/SMT

RoHS

Details

Vgs Gatesource Breakdown Voltage

145 V

Configuration

Single

Output Power

260 W

Ambalaj

Tray

Maximum Drain Gate Voltage

48 V

Vds Drainsource Breakdown Voltage

36 V

Part Aliases

T1G2028536 1110346

Seri

T1G2028536