QPD1881L

Teknik Özellikler

Maks. Çalışma Sıcaklığı

+ 85 C

Configuration

Single

Fabrika Paket Adedi

25

Montaj Stili

SMD/SMT

Moisture Sensitive

Yes

Kılıf / Paket

NI780-2

Transistor Type

HEMT

Maximum Drain Gate Voltage

55 V

RoHS

Details

Operating Frequency

2.7 GHz to 2.9 GHz

Id Continuous Drain Current

13 A

Transistor Polarity

N-Channel

Development Kit

QPD1881LEVB01

Pd Power Dissipation

237 W

Vds Drainsource Breakdown Voltage

145 V

Minimum Operating Temperature

- 40 C

Gain

21.2 dB

Seri

QPD1881L

Vgs Gatesource Breakdown Voltage

- 7 V to 2 V