Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Gain
- 17.7 dB
- Seri
- QPD1018
- Vgs Gatesource Breakdown Voltage
- - 7 V to 2 V
- Minimum Operating Temperature
- - 40 C
- Vds Drainsource Breakdown Voltage
- 145 V
- Pd Power Dissipation
- 522 W
- Operating Frequency
- 2.7 GHz to 3.1 GHz
- Maximum Drain Gate Voltage
- 55 V
- RoHS
- Details
- Development Kit
- QPD1018EVB
- Transistor Polarity
- N-Channel
- Id Continuous Drain Current
- 15 A
- Shipping Restrictions
- This product may require additional documentation to export from the United States.
- Maks. Çalışma Sıcaklığı
- + 85 C
- Configuration
- Single
- Fabrika Paket Adedi
- 18
- Kılıf / Paket
- 17.4 mm x 24 mm x 4.31 mm
- Transistor Type
- HEMT
- Moisture Sensitive
- Yes
- Montaj Stili
- SMD/SMT
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