Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Configuration
- Single
- Fabrika Paket Adedi
- 25
- Maks. Çalışma Sıcaklığı
- + 85 C
- Montaj Stili
- SMD/SMT
- Moisture Sensitive
- Yes
- Transistor Type
- HEMT
- Kılıf / Paket
- NI780-2
- Maximum Drain Gate Voltage
- 55 V
- RoHS
- Details
- Operating Frequency
- DC to 1.7 GHz
- Id Continuous Drain Current
- 70 A
- Transistor Polarity
- N-Channel
- Development Kit
- QPD1016EVB01
- Output Power
- 680 W
- Vds Drainsource Breakdown Voltage
- 145 V
- Pd Power Dissipation
- 714 W
- Minimum Operating Temperature
- - 40 C
- Gain
- 23.9 dB
- Seri
- QPD1016
- Vgs Gatesource Breakdown Voltage
- - 7 V to 1.5 V
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