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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Montaj Stili
- SMD/SMT
- Moisture Sensitive
- Yes
- Kılıf / Paket
- DFN-6
- Transistor Type
- HEMT
- Maks. Çalışma Sıcaklığı
- + 85 C
- Fabrika Paket Adedi
- 100
- Configuration
- Single Triple Drain
- Id Continuous Drain Current
- 1.7 A
- Birim Ağırlık
- 0.274843 oz
- Output Power
- 178 W
- Transistor Polarity
- N-Channel
- Development Kit
- QPD1013EVB01
- Applications
- Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
- RoHS
- Details
- Maximum Drain Gate Voltage
- 65 V
- Operating Frequency
- 1.2 GHz to 2.7 GHz
- Part Aliases
- QPD1013
- Pd Power Dissipation
- 67 W
- Minimum Operating Temperature
- - 40 C
- Seri
- QPD1013
- Ambalaj
- Reel
- Gain
- 21.8 dB
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