QPD1011SR

Teknik Özellikler

Gain

21 dB

Ambalaj

Reel

Seri

QPD1011

Vgs Gatesource Breakdown Voltage

145 V

Vds Drainsource Breakdown Voltage

50 V

Pd Power Dissipation

13 W

Part Aliases

QPD1011

Minimum Operating Temperature

- 40 C

Maximum Drain Gate Voltage

55 V

RoHS

Details

Operating Frequency

30 MHz to 1200 MHz

Id Continuous Drain Current

1.46 A

Development Kit

QPD1011EVB01

Transistor Polarity

N-Channel

Output Power

8.7 W

Fabrika Paket Adedi

100

Maks. Çalışma Sıcaklığı

+ 85 C

Moisture Sensitive

Yes

Montaj Stili

SMD/SMT

Transistor Type

HEMT

Kılıf / Paket

SMD-8