Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Output Power
- 162 W
- Operating Temperature Range
- - 40 C to + 85 C
- Kılıf / Paket
- NI-360
- Gain
- 17.5 dB
- Transistor Type
- HEMT
- Pd Power Dissipation
- 127 W
- Development Kit
- QPD1008PCB401
- RoHS
- Details
- Transistor Polarity
- N-Channel
- Vds Drainsource Breakdown Voltage
- 50 V
- Montaj Stili
- SMD/SMT
- Minimum Operating Temperature
- - 40 C
- Configuration
- Single
- Fabrika Paket Adedi
- 25
- Moisture Sensitive
- Yes
- Vgs Th Gatesource Threshold Voltage
- - 2.8 V
- Vgs Gatesource Breakdown Voltage
- 145 V
- Ambalaj
- Tray
- Maks. Çalışma Sıcaklığı
- + 85 C
- Id Continuous Drain Current
- 4 A
- Birim Ağırlık
- 0.566059 oz
- Operating Frequency
- 3.2 GHz
- Seri
- QPD1008
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