Adet bazlı fiyat
- 1+ adet$1.00
- 10+ adet$1.00
- 25+ adet$1.00
- 50+ adet$1.00
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- RoHS
- Details
- Transistor Polarity
- N-Channel
- Pd Power Dissipation
- 370 W
- Transistor Type
- HEMT
- Kılıf / Paket
- RF-565
- Seri
- QPD1003
- Parça Durumu
- Obsolete
- Birim Ağırlık
- 3.691596 oz
- Maks. Çalışma Sıcaklığı
- + 85 C
- Ambalaj
- Tray
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Paket Adedi
- 18
- Moisture Sensitive
- Yes
- Minimum Operating Temperature
- - 40 C
- Vds Drainsource Breakdown Voltage
- 50 V
- Montaj Stili
- SMD/SMT
- Development Kit
- QPD1003PCB401
- Gain
- 19.9 dB
- Part Aliases
- 1131389 1131389
- Output Power
- 540 W
- Operating Temperature Range
- - 40 C to + 85 C
- Operating Frequency
- 1.2 GHz to 1.4 GHz
- Id Continuous Drain Current
- 15 A
- Configuration
- Single
- Vgs Th Gatesource Threshold Voltage
- - 2.8 V
- Vgs Gatesource Breakdown Voltage
- 145 V
İlgili Ürünler
Stokta
Microsemi
0150SC-1250M
JFETs Transistors
Central Semiconductor Corp
2N2608
JFETs Transistors
Stokta
Microchip Technology
2N2608UB
JFETs Transistors
Stokta
Microchip Technology
2N2608UB/TR
JFETs Transistors
Microsemi Corporation
2N2609
JFETs Transistors
Stokta
Vishay
2N3819
JFETs Transistors
Stokta
Central Semiconductor
2N3819 APM PBFREE
JFETs Transistors
Stokta
Rochester Electronics
2N3819_Q
JFETs Transistors