RFD14N05SM

Teknik Özellikler

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Case Connection

DRAIN

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Element Configuration

Single

Vgs Max

±20V

Dual Supply Voltage

50V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Direnç

100mOhm

Current Continuous Drain Id25

14A Tc

Gate Charge Qg Max Vgs

40nC @ 20V

Rds On Max Id Vgs

100m Ω @ 14A, 10V

Nominal Vgs

4 V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

48W

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj Tipi

Surface Mount

Terminal

SMD/SMT

Power Dissipation Max

48W Tc

Number Of Elements

1

Drain To Source Breakdown Voltage

50V

Vgsth Max Id

4V @ 250μA

Montaj

Surface Mount

Terminal Formu

GULL WING

RoHS Durumu

RoHS Compliant

Akım Değeri

14A

Ambalaj

Tube

Fall Time Typ

17 ns

Genişlik

6.8mm

Terminal Sayısı

2

Radyasyon Dayanımı

No

Rise Time

26ns

Input Capacitance Ciss Max Vds

570pF @ 25V

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)