RFD14N05LSM

Teknik Özellikler

Current Continuous Drain Id25

14A Tc

Gate Charge Qg Max Vgs

40nC @ 10V

Direnç

100mOhm

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

5V

Nominal Vgs

2 V

Rds On Max Id Vgs

100m Ω @ 14A, 5V

Yükseklik

2.39mm

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Weight

260.37mg

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Element Configuration

Single

Dual Supply Voltage

50V

Vgs Max

±10V

Case Connection

DRAIN

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

10V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

50V

Turn On Delay Time

13 ns

Terminal

SMD/SMT

Power Dissipation Max

48W Tc

Number Of Elements

1

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation

48W

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Rise Time

24ns

Recovery Time

125 ns

Terminal Sayısı

2

Fabrika Tedarik Süresi

8 Weeks

Genişlik

6.22mm

Ambalaj

Tube

Fall Time Typ

16 ns

Vgsth Max Id

2V @ 250μA

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant