RFD14N05

Teknik Özellikler

Direnç

100mOhm

Montaj Tipi

Through Hole

Fall Time Typ

17 ns

Continuous Drain Current Id

14A

Lead Length

9.65mm

Power Dissipation Max

48W Tc

Drain To Source Breakdown Voltage

50V

Voltage Rated Dc

50V

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Terminal Sayısı

3

Element Configuration

Single

Yayın Yılı

2002

Rise Time

26ns

Transistor Application

SWITCHING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

45 ns

Input Capacitance Ciss Max Vds

570pF @ 25V

Current Continuous Drain Id25

14A Tc

Number Of Elements

1

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Obsolete

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Lead Free

Akım Değeri

14A

Ambalaj

Tube

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

40nC @ 20V

Rds On Max Id Vgs

100m Ω @ 14A, 10V

Montaj

Through Hole

Power Dissipation

48W

Drive Voltage Max Rds On Min Rds On

10V

Radyasyon Dayanımı

No

Threshold Voltage

4V

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3