NVTFS6H850NWFTAG

Teknik Özellikler

Rds On Max Id Vgs

9.5m Ω @ 10A, 10V

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

300A

Input Capacitance Ciss Max Vds

1140pF @ 40V

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

11A Ta 68A Tc

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

S-PDSO-F5

Power Dissipation Max

3.2W Ta 107W Tc

Number Of Elements

1

Vgs Max

±20V

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerWDFN

Terminal Formu

FLAT

Gate Charge Qg Max Vgs

19nC @ 10V

Terminal Kaplaması

Tin (Sn)

Seri

Automotive, AEC-Q101

Terminal Sayısı

5

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

RoHS Durumu

RoHS Compliant

Drain Currentmax Abs Id

11A

Ds Breakdown Voltagemin

80V

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0095Ohm

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

80V

Avalanche Energy Rating Eas

271 mJ

Lifecycle Status

ACTIVE (Last Updated: 6 hours ago)

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Fet Type

N-Channel

Vgsth Max Id

4V @ 70μA

Operating Mode

ENHANCEMENT MODE