NVTFS5C658NLWFTAG

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

5m Ω @ 50A, 10V

Pulsed Drain Currentmax Idm

440A

Input Capacitance Ciss Max Vds

1935pF @ 25V

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-F5

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

109A Tc

Kılıf / Paket

8-PowerWDFN

Power Dissipation Max

114W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

12nC @ 4.5V

Terminal Formu

FLAT

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

5

Parça Durumu

Active

Seri

Automotive, AEC-Q101

Ds Breakdown Voltagemin

60V

Drain Currentmax Abs Id

18A

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.073Ohm

Kurşunsuz Kodu

yes

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

142 mJ

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Drain To Source Voltage Vdss

60V

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.2V @ 250μA

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE