NVMFS5C673NLAFT1G

Teknik Özellikler

Vgsth Max Id

2V @ 35μA

Ds Breakdown Voltagemin

60V

Gate Charge Qg Max Vgs

9.5nC @ 10V

Drainsource On Resistancemax

0.013Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

50A Tc

Kılıf / Paket

8-PowerTDFN, 5 Leads

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

290A

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±20V

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 19 hours ago)

Fabrika Tedarik Süresi

6 Weeks

Jesd30 Code

R-PDSO-F5

Power Dissipation Max

46W Tc

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

88 mJ

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Case Connection

DRAIN

Drain To Source Voltage Vdss

60V

Terminal Formu

FLAT

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Rds On Max Id Vgs

9.2m Ω @ 25A, 10V

Input Capacitance Ciss Max Vds

880pF @ 25V

Number Of Elements

1

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ