NVMFS5113PLWFT1G

Teknik Özellikler

Vgs Max

±20V

Fet Type

P-Channel

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

415A

Kılıf / Paket

8-PowerTDFN, 5 Leads

Current Continuous Drain Id25

10A Ta 64A Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.014Ohm

Gate Charge Qg Max Vgs

83nC @ 10V

Ds Breakdown Voltagemin

60V

Vgsth Max Id

2.5V @ 250μA

Avalanche Energy Rating Eas

315 mJ

Yayın Yılı

2014

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-F5

Power Dissipation Max

3.8W Ta 150W Tc

Fabrika Tedarik Süresi

17 Weeks

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Kurşunsuz

Lead Free

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Number Of Elements

1

Input Capacitance Ciss Max Vds

4400pF @ 25V

Rds On Max Id Vgs

14m Ω @ 17A, 10V

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Terminal Formu

FLAT

Drain To Source Voltage Vdss

60V

Case Connection

DRAIN