NVMFS5113PLT1G

Teknik Özellikler

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Turn On Delay Time

15 ns

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

4400pF @ 25V

Number Of Elements

1

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Rds On Max Id Vgs

14m Ω @ 17A, 10V

Continuous Drain Current Id

-10A

Threshold Voltage

-2.5V

Case Connection

DRAIN

Drain To Source Voltage Vdss

60V

Power Dissipation

150W

Terminal Formu

FLAT

Current Continuous Drain Id25

10A Ta 64A Tc

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Drain To Source Breakdown Voltage

-60V

Vgs Max

±20V

Fet Type

P-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Yükseklik

1.1mm

Pin Sayısı

8

Gate Charge Qg Max Vgs

83nC @ 10V

Number Of Channels

1

Vgsth Max Id

2.5V @ 250μA

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Fabrika Tedarik Süresi

14 Weeks

Power Dissipation Max

3.8W Ta 150W Tc