NVMFS4C03NWFT3G

Teknik Özellikler

Vgsth Max Id

2.2V @ 250μA

Gate Charge Qg Max Vgs

45.2nC @ 10V

Drainsource On Resistancemax

0.0024Ohm

Ds Breakdown Voltagemin

30V

Pin Sayısı

8

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Pulsed Drain Currentmax Idm

900A

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Current Continuous Drain Id25

31.4A Ta 143A Tc

Kılıf / Paket

8-PowerTDFN

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 3 days ago)

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Fabrika Tedarik Süresi

38 Weeks

Power Dissipation Max

3.71W Ta 77W Tc

Jesd30 Code

R-PDSO-F5

Avalanche Energy Rating Eas

549 mJ

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Terminal Formu

FLAT

Case Connection

DRAIN

Reference Standard

AEC-Q101

Drain To Source Voltage Vdss

30V

Rds On Max Id Vgs

2.1m Ω @ 30A, 10V

Continuous Drain Current Id

143A

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1