NVMFS4C03NT1G

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

31.4A Ta 143A Tc

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

900A

REACH Uyumluluk Kodu

not_compliant

Drain To Source Breakdown Voltage

30V

Vgs Max

±20V

Fet Type

N-Channel

Rise Time

32ns

Number Of Channels

1

Vgsth Max Id

2.2V @ 250μA

Pin Sayısı

8

Gate Charge Qg Max Vgs

45.2nC @ 10V

Drainsource On Resistancemax

0.0024Ohm

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Avalanche Energy Rating Eas

549 mJ

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn Off Delay Time

27 ns

Fabrika Tedarik Süresi

8 Weeks

Power Dissipation Max

3.71W Ta 77W Tc

Jesd30 Code

R-PDSO-F5

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Fall Time Typ

17 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Turn On Delay Time

14 ns

Kurşunsuz

Lead Free

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Rds On Max Id Vgs

2.1m Ω @ 30A, 10V

Continuous Drain Current Id

143A

Gate To Source Voltage Vgs

20V

Number Of Elements

1