NVD6416ANT4G

Teknik Özellikler

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

100V

Fall Time Typ

20 ns

Terminal Formu

GULL WING

Rise Time

22ns

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

81m Ω @ 17A, 10V

Gate To Source Voltage Vgs

20V

Case Connection

DRAIN

Element Configuration

Single

Continuous Drain Current Id

17A

Turn Off Delay Time

24 ns

Vgs Max

±20V

Vgsth Max Id

4V @ 250μA

Lifecycle Status

LIFETIME (Last Updated: 1 week ago)

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Currentmax Idm

62A

Kurşunsuz Kodu

yes

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

71W Tc

Current Continuous Drain Id25

17A Tc

Pin Sayısı

4

Drainsource On Resistancemax

0.081Ohm

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Yayın Yılı

2012

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

20nC @ 10V

Fet Type

N-Channel

Power Dissipation

71W

Number Of Elements

1

Yüzey Montaj

YES