NVD3055L170T4G

Teknik Özellikler

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

15V

Rds On Max Id Vgs

170m Ω @ 4.5A, 5V

Rise Time

69ns

JESD-609 Kodu

e3

Fall Time Typ

38 ns

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

60V

Kurşunsuz

Lead Free

Continuous Drain Current Id

9A

Element Configuration

Single

Case Connection

DRAIN

Number Of Channels

1

Weight

3.949996g

Vgsth Max Id

2V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn Off Delay Time

10 ns

Vgs Max

±15V

Drive Voltage Max Rds On Min Rds On

5V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Currentmax Idm

27A

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Drain Currentmax Abs Id

9A

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

9A Ta

Pin Sayısı

3

Power Dissipation Max

1.5W Ta 28.5W Tj

Gate Charge Qg Max Vgs

10nC @ 5V

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Yayın Yılı

2009

Terminal Kaplaması

Tin (Sn)