NVB25P06T4G

Teknik Özellikler

Rise Time

72ns

Rds On Max Id Vgs

82m Ω @ 25A, 10V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

600 mJ

Fall Time Typ

190 ns

Continuous Drain Current Id

27.5A

Vgs Max

±15V

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

80A

Drainsource On Resistancemax

0.082Ohm

Ds Breakdown Voltagemin

60V

Fet Type

P-Channel

Gate Charge Qg Max Vgs

50nC @ 10V

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

2 Weeks

Input Capacitance Ciss Max Vds

1680pF @ 25V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn On Delay Time

14 ns

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

15V

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Terminal Formu

GULL WING

Element Configuration

Single

Case Connection

DRAIN

Turn Off Delay Time

43 ns

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 6 days ago)

Vgsth Max Id

4V @ 250μA

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Polaritychannel Type

N-CHANNEL

Terminal Sayısı

2

RoHS Durumu

RoHS Compliant

Pin Sayısı

3

Current Continuous Drain Id25

27.5A Ta