NVATS5A113PLZT4G

Teknik Özellikler

JESD-609 Kodu

e6

Rds On Max Id Vgs

29.5m Ω @ 18A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

95 mJ

Terminal Formu

GULL WING

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

DRAIN

Vgs Max

±20V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Terminal Pozisyonu

SINGLE

Vgsth Max Id

2.6V @ 1mA

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

114A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage Max Rds On Min Rds On

4V 10V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

38A

Current Continuous Drain Id25

38A Ta

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.0295Ohm

Ds Breakdown Voltagemin

60V

Power Dissipation Max

60W Tc

Fet Type

P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

55nC @ 10V

Drain To Source Voltage Vdss

60V

Parça Durumu

Active

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

2400pF @ 20V

Jesd30 Code

R-PSSO-G2

Reference Standard

AEC-Q101

Fabrika Tedarik Süresi

5 Weeks

Ambalaj

Tape & Reel (TR)