NVATS5A112PLZT4G

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

60V

Fet Type

P-Channel

Gate Charge Qg Max Vgs

33.5nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1

Input Capacitance Ciss Max Vds

1450pF @ 20V

Jesd30 Code

R-PSSO-G2

Reference Standard

AEC-Q101

Fabrika Tedarik Süresi

7 Weeks

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

27A

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Power Dissipation Max

48W Tc

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.043Ohm

Current Continuous Drain Id25

27A Ta

Terminal Pozisyonu

SINGLE

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Vgsth Max Id

2.6V @ 1mA

Vgs Max

±20V

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

81A

Drive Voltage Max Rds On Min Rds On

4V 10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating Eas

50 mJ

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Rds On Max Id Vgs

43m Ω @ 13A, 10V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

JESD-609 Kodu

e6