NTR5105PT1G

Teknik Özellikler

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Power Dissipation Max

347mW Ta

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

1nC @ 5V

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

60V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

2 Weeks

Parça Durumu

Active

Turn Off Delay Time

8.8 ns

Vgsth Max Id

3V @ 250μA

Number Of Elements

1

Fall Time Typ

12.8 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

30.3pF @ 25V

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G3

Current Continuous Drain Id25

196mA Ta

Number Of Channels

1

Rds On Max Id Vgs

5 Ω @ 100mA, 10V

Direnç

5Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Turn On Delay Time

5.8 ns

Transistor Application

SWITCHING

Montaj

Surface Mount

Rise Time

4ns

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

-60V

Vgs Max

±20V

Yayın Yılı

2014