NTMFS5C646NLT1G

Teknik Özellikler

Drain To Source Breakdown Voltage

60V

Turn On Delay Time

10.4 ns

Number Of Elements

1

Power Dissipation Max

3.7W Ta 79W Tc

Kılıf / Paket

8-PowerTDFN

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

33.7nC @ 10V

Current Continuous Drain Id25

19A Ta

Uzunluk

6.1mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

4.7m Ω @ 50A, 10V

Jesd30 Code

R-PDSO-F5

Yükseklik

1.05mm

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Channels

1

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Element Configuration

Single

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

23.6 ns

Fet Type

N-Channel

Yayın Yılı

2014

Pin Sayısı

8

Terminal Pozisyonu

DUAL

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

19A

Parça Durumu

Active

Threshold Voltage

2V

Input Capacitance Ciss Max Vds

2164pF @ 25V

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Rise Time

14.9ns

Terminal Sayısı

5