NTMFS4926NT1G

Teknik Özellikler

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

8.6 ns

Power Dissipation Max

920mW Ta 21.6W Tc

Number Of Elements

1

Power Dissipation

2.7W

Kılıf / Paket

8-PowerTDFN, 5 Leads

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

17.3nC @ 10V

Contact Plating

Tin

Current Continuous Drain Id25

9A Ta 44A Tc

Nominal Vgs

1.6 V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

7m Ω @ 30A, 10V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Element Configuration

Single

Yüzey Montaj

YES

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

14.7 ns

Fet Type

N-Channel

Pin Sayısı

5

Yayın Yılı

2007

Drain Currentmax Abs Id

9A

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

44A

Parça Durumu

Active

Threshold Voltage

1.6V

Input Capacitance Ciss Max Vds

1004pF @ 15V

Kurşunsuz

Lead Free

Pin Sayısı

5