NTMFS4899NFT1G

Teknik Özellikler

Turn On Delay Time

12.6 ns

Avalanche Energy Rating Eas

84 mJ

Drain To Source Breakdown Voltage

30V

Power Dissipation Max

920mW Ta 48W Tc

Number Of Elements

1

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

2.7W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

5m Ω @ 30A, 10V

Current Continuous Drain Id25

10.4A Ta 75A Tc

Gate Charge Qg Max Vgs

25nC @ 10V

Direnç

5MOhm

Uzunluk

5.1mm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

Vgs Max

±20V

Yükseklik

1.1mm

Transistor Application

SWITCHING

Case Connection

DRAIN

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Fet Type

N-Channel

Turn Off Delay Time

20 ns

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Pin Sayısı

5

Yayın Yılı

2010

Parça Durumu

Active

Continuous Drain Current Id

75A

Kurşunsuz Kodu

yes

Threshold Voltage

1.5V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)