NTMFS4852NT1G

Teknik Özellikler

Drain To Source Breakdown Voltage

30V

Avalanche Energy Rating Eas

360 mJ

Turn On Delay Time

21.1 ns

Number Of Elements

1

Power Dissipation Max

900mW Ta 86.2W Tc

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

2.31W

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

71.3nC @ 10V

Current Continuous Drain Id25

16A Ta 155A Tc

Direnç

2.1MOhm

Uzunluk

5.1mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

2.1m Ω @ 30A, 10V

Transistor Application

SWITCHING

Yükseklik

1.1mm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Yüzey Montaj

YES

Element Configuration

Single

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

35 ns

Fet Type

N-Channel

Yayın Yılı

2010

Pin Sayısı

5

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Kurşunsuz Kodu

yes

Parça Durumu

Active

Continuous Drain Current Id

155A

Threshold Voltage

1.8V

Input Capacitance Ciss Max Vds

4970pF @ 12V

Kurşunsuz

Lead Free