NTMFS4851NT1G

Teknik Özellikler

JESD-609 Kodu

e3

Case Connection

DRAIN

Fall Time Typ

5.2 ns

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2.5V @ 250μA

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0087Ohm

Gate To Source Voltage Vgs

16V

RoHS Durumu

RoHS Compliant

Terminal Formu

FLAT

Gate Charge Qg Max Vgs

20nC @ 4.5V

Pin Sayısı

5

Current Continuous Drain Id25

9.5A Ta 66A Tc

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Rise Time

39.8ns

Rds On Max Id Vgs

5.9m Ω @ 30A, 10V

Terminal Sayısı

5

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

34 Weeks

Vgs Max

±16V

Element Configuration

Single

Yüzey Montaj

YES

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

LIFETIME (Last Updated: 1 week ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

15A

Parça Durumu

Obsolete

Input Capacitance Ciss Max Vds

1850pF @ 12V

Power Dissipation

2.16W

Kılıf / Paket

8-PowerTDFN, 5 Leads

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

18.6 ns

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

14.4 ns