NTMD4184PFR2G

Teknik Özellikler

Power Dissipation Max

770mW Ta

Number Of Elements

1

Drain Currentmax Abs Id

4A

Terminal Pozisyonu

DUAL

Pin Sayısı

8

Yayın Yılı

2008

Turn Off Delay Time

18 ns

Drain To Source Breakdown Voltage

-30V

Turn On Delay Time

7.2 ns

Fet Type

P-Channel

Power Dissipation

2.31W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

360pF @ 10V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Lifecycle Status

ACTIVE (Last Updated: 9 hours ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

2.3A

Parça Durumu

Active

Kurşunsuz Kodu

yes

Terminal Sayısı

8

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

38 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

2.3A Ta

Pin Sayısı

8

Gate Charge Qg Max Vgs

4.2nC @ 4.5V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rise Time

12ns

Rds On Max Id Vgs

95m Ω @ 3A, 10V

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

Montaj

Surface Mount

Vgsth Max Id

3V @ 250μA

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V