NTLJS2103PTBG

Teknik Özellikler

Power Dissipation

1.9W

Kılıf / Paket

6-WDFN Exposed Pad

Montaj Tipi

Surface Mount

Number Of Elements

1

Power Dissipation Max

700mW Ta

Drain To Source Breakdown Voltage

12V

Turn On Delay Time

8 ns

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

8V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Application

SWITCHING

Yükseklik

750μm

Seri

µCool™

Vgs Max

±8V

Element Configuration

Single

Yüzey Montaj

YES

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Uzunluk

2mm

Contact Plating

Tin

Gate Charge Qg Max Vgs

15nC @ 4.5V

Current Continuous Drain Id25

3.5A Ta

Rds On Max Id Vgs

40m Ω @ 3A, 4.5V

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Input Capacitance Ciss Max Vds

1157pF @ 6V

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

7.7A

Parça Durumu

Active

Yayın Yılı

2008

Pin Sayısı

6

Drain Currentmax Abs Id

5.9A

Terminal Pozisyonu

DUAL

Turn Off Delay Time

74 ns

Fet Type

P-Channel

Drainsource On Resistancemax

0.04Ohm