NTD5862NT4G

Teknik Özellikler

Power Dissipation Max

115W Tc

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Current Continuous Drain Id25

98A Tc

Lifecycle Status

ACTIVE (Last Updated: 23 hours ago)

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Rise Time

70ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0057Ohm

Gate Charge Qg Max Vgs

82nC @ 10V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

15 Weeks

Turn On Delay Time

18 ns

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Terminal Sayısı

2

Yayın Yılı

2010

Avalanche Energy Rating Eas

205 mJ

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Power Dissipation

96W

Vgs Max

±20V

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

5.7m Ω @ 45A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

6000pF @ 25V

Turn Off Delay Time

35 ns

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

60V

Fall Time Typ

60 ns