NTD4969NT4G

Teknik Özellikler

Power Dissipation Max

1.38W Ta 26.3W Tc

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Vgsth Max Id

2.5V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Current Continuous Drain Id25

9.4A Ta 41A Tc

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Rise Time

27ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

9nC @ 4.5V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

8 Weeks

Turn On Delay Time

10 ns

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Terminal Sayısı

2

Yayın Yılı

2011

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Power Dissipation

26.3W

Vgs Max

±20V

Case Connection

DRAIN

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

9m Ω @ 30A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

837pF @ 15V

Turn Off Delay Time

13.3 ns

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

20V

Fall Time Typ

6.4 ns