NTD4963N-35G

Teknik Özellikler

Power Dissipation Max

1.1W Ta 35.7W Tc

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Direnç

9.6MOhm

Vgsth Max Id

2.5V @ 250μA

Current Continuous Drain Id25

8.1A Ta 44A Tc

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Yükseklik

6.35mm

RoHS Durumu

RoHS Compliant

Yüzey Montaj

NO

Terminal Kaplaması

Tin (Sn)

Rise Time

20ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

16.2nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Radyasyon Dayanımı

No

Turn On Delay Time

12 ns

Ambalaj

Tube

Genişlik

2.38mm

Threshold Voltage

1.45V

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Terminal Sayısı

3

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Power Dissipation

35.7W

Vgs Max

±20V

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

9.6m Ω @ 30A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1035pF @ 12V

Turn Off Delay Time

14 ns

Kurşunsuz

Lead Free